منابع مشابه
Sharp and smooth boundaries of quantum Hall liquids.
We study the transition between sharp and smooth density distributions at the edges of Quantum Hall Liquids in the presence of interactions. We find that, for strong confining potentials, the edge of a ν = 1 liquid is described by the ZF = 1 Fermi Liquid theory, even in the presence of interactions, a consequence of the chiral nature of the system. When the edge confining potential is decreased...
متن کاملMemorial of Joseph Murray
It has not been too long since we realized that Joseph Murray (1919-2012) has passed away while we heard this sad news 2 weeks ago. We never forget his memories and trip for the first time on 14th November 1974to Iran. He returned to our country one more time later to share his experiences with the country specialists. It is a great sorrow that he did not see our progress in plastic and reconst...
متن کاملStructure of a single sharp quantum Hall edge probed by momentum-resolved tunneling.
Momentum-resolved magnetotunneling spectroscopy is performed at a single sharp quantum Hall (QH) edge to probe the structure of integer QH edge modes. An epitaxially overgrown cleaved edge is shown to realize the sharp-edge limit with interchannel distances smaller than both the magnetic length and the Bohr radius where the Chklovskii soft-edge picture is no longer valid. The line shape of prin...
متن کاملSharp quantum Hall edges: Experimental realizations of edge states without incompressible strips
Experimental results of sharp edge potentials in the quantum Hall (QH) regime of a two-dimensional electron system are presented. First the general QH edge state picture is reviewed, including recent theory which explains the importance of incompressible strips at the sample edge. Then two sharp edge geometries are presented where incompressible strips are predicted to vanish below the scale of...
متن کاملTechnology and properties of a vector hall sensor
Symmetrical four-sided 12-mm-high pyramids with 301-tilted sides were revealed by the etching of semi-insulating (1 0 0) GaAs substrates in 1H3PO4: H2O2:8H2O at 25 1C via sacrificial /0 0 1S-oriented Ti/GaAs/AlAs (100/2000/100 nm) etching mask patterns. The pyramids, MOCVD overgrown with InGaP/AlGaAs/GaAs heterostructure pyramids, were used as the base for magnetic field vector sensors. Each se...
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ژورنال
عنوان ژورنال: The Journal of The Institute of Image Information and Television Engineers
سال: 2006
ISSN: 1881-6908,1342-6907
DOI: 10.3169/itej.60.1253